Abstract
Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD). An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality. The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors. The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.
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