Growth and microstructural evolution of WS2 nanostructures with tunable field and light modulated electrical transport

Abstract

We report CVD growth of WS2 nanostructures with the ability to control the evolution of 1D to 2D microstructural changes for light and field effect transistor applications. Detailed mechanistic growth sequences from WO3 nanorod to nanotube, monolayer and pyramidal structures of WS2 has been achieved using atmospheric pressure chemical vapor deposition (APCVD). Electron microscopy and Raman spectroscopy analysis showed the growth evolution of different nanostructures and their formation mechanism. Location specific growth of different WS2 nanostructures can be achieved by drop casting dispersed WO3 nanorods on required substrate. Layer dependent photoluminescence (PL) properties of WS2 indicate the effect of quantum confinement induced radiative recombination and enhanced PL intensity in monolayer WS2 provides suitability for nanoscale photodetector application. The fabricated device shows light as well as field modulated switching at ultra-low biased voltage in hybrid WS2 nanostructure that contains 1D (nanotube)-2D (flake) interface. The demonstrated aspects of CVD growth and hybrid device characteristics provide opportunities to tune electrical transport of WS2 nanostructures at low active power.