Abstract
The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS2) is grown on the SiO2/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS2 is systematically characterized by the high-resolution optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, and the field emission scanning electron microscopy, which can confirm that the MoS2 is a monolayer. Then, the monolayer MoS2 is selected as the channel material to complete the fabrication process of the back-gate field effect transistor (FET). Finally, the electrical characteristics of the monolayer MoS2-based FET are tested to obtain the electrical performance. The switching ratio is 103, the field effect mobility is about 0.86 cm2/Vs, the saturation current is 2.75 × 10−7 A/μm, and the lowest gate leakage current is 10−12 A. Besides, the monolayer MoS2 can form the ohmic contact with the Ti/Au metal electrode. Therefore, the electrical performances of monolayer MoS2-based FET are relatively poor, which requires the further optimization of the monolayer MoS2 growth process. Meanwhile, it can provide the guidance for the application of monolayer MoS2-based FETs in the future low-power optoelectronic integrated circuits.
Highlights
The field effect transistors (FETs) are the basic unit of very large scale integrated circuits [1,2]
The paper is composed of five parts: First, the large-area high-quality monolayer MoS2 is prepared by the atmospheric pressure chemical vapor deposition (APCVD) to facilitate the fabrication of FETs [15]
The monolayer MoS2 on SiO2/Si substrate was grown by APCVD, and the MoS2 sample was characterized by the high resolution microscope, the Raman spectroscopy, photoluminescence spectroscopy, and field emission scanning electron microscopy, which could prove the existence of monolayer MoS2
Summary
The field effect transistors (FETs) are the basic unit of very large scale integrated circuits [1,2]. It is necessary to find the suitable semiconductor materials to improve the electrical performance of transistor [3,4]. The FETs with the direct bandgap monolayer MoS2 have the larger switching ratio and the lower off-state current. The mobility and on-state current of the FETs are very lower, so it is very meaningful to optimize and enhance the electrical performance, which can provide the application reference of the monolayer MoS2-based FETs. The paper is composed of five parts: First, the large-area high-quality monolayer MoS2 is prepared by the APCVD to facilitate the fabrication of FETs [15]. The following are the electrical performance parameters of the prepared monolayer MoS2-based FET in this paper, the electrical performance parameters have increased by improving the electrode contact and channel material [16]. The electrical performance of monolayer MoS2-based FETs is not ideal, we have mastered the fabrication process of monolayer MoS2-based FETs, and the growth process of monolayer MoS2 needs further optimization, which can provide the reference for the preparation of high quality monolayer MoS2-based FETs [17]
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