Growth and impact of intrinsic interlayers in high temperature vapor phase epitaxy of GaN

Abstract

Structural quality of GaN layers grown on foreign substrates is usually improved by applying masks or interlayers, which interact with the crystal structure defects, mainly with threading dislocations, and consequently reduce their density. In this work, GaN interlayers with intrinsic defect structures were employed as barriers impeding the propagation of threading dislocations. The GaN samples were produced in a multistage deposition process by high-temperature vapor phase epitaxy (HTVPE). They consisted of GaN seed layers deposited on 15 × 15 mm2 (001)-oriented sapphire substrates, structured GaN interlayers and GaN top layers. The structuring of the interlayers was facilitated by changing the substrate temperature and the V/III ratio during the growth. The optical and scanning electron microscopies revealed that the structured interlayers contain pyramidal facets, vertical trenches and elongated voids. The results of X-ray diffraction and Raman spectroscopy have shown that these microstructure features are able to reduce the density of threading dislocations in the top layer and the tensile residual stress that develops in the top layer during the deposition process. These results demonstrate the potential of the intrinsic interlayer concept for the in-line defect and stress engineering in HTVPE GaN layer stacks.