Abstract
The authors describe the growth and fabrication of InGaNP quantum well (QW)-based yellow-red light emitting diodes (LEDs) grown directly on transparent GaP (100) wafers. The dependence of InyGa1−yN0.005P0.995∕GaP conduction and valence band offsets on the In composition was calculated, and the dependence of AlxGa1−xP∕GaP band offsets on the Al concentration was also calculated. Using Al0.14Ga0.86P cladding layers increases the light output from a LED chip by 15%. InGaNP∕GaP multiple QW LED structures show an increase of light output and saturation current.
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