Abstract
The growth and electrical transport properties in the temperature range 77–295 K of thin films of CuInTe 2 grown on mica and glass substrates and annealed in an argon atmosphere were studied. It was found that the as-grown films had high resistivity and that annealing of the films in argon increased their conductivity. The annealed films were single phase and polycrystalline. The films evaporated at rates from 60 to 80 Å s −1 had better electrical properties than the films grown at higher evaporation rates. The d.c. conductivity and Hall coefficient data were analysed in order to establish the conduction mechanism.
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