Abstract
Pb(Zr 0.52Ti 0.48)O 3 (PZT) ferroelectric thin films with LaNiO 3 (LNO) as bottom electrodes have been grown on amorphous TiN buffered Si(1 0 0) substrates by pulsed laser deposition. It was found that highly (0 0 1)-oriented LNO films could be obtained even if TiN underlayers were amorphous. XRD analyses showed that the subsequently deposited PZT films were also preferentially (0 0 1)-oriented due to the template effect of the perovskite structured LNO films. Dielectric constant of the PZT thin films remained almost constant with frequency in the range from 10 3 to 10 6 Hz, and tangent loss was as small as 0.02 at high frequencies. The remnant polarization and coercive field of an Au/PZT/LNO capacitor were typically 20 μC/cm 2 and 30 kV/cm, respectively. C– V and I– V characteristics revealed the capacitance and leakage current variations with applied voltage were asymmetric when the bottom electrode was negatively as well as positively biased, indicating that ferroelectric/electrode interfaces and space charges play an important role in the electrical properties of ferroelectric capacitors.
Published Version
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