Abstract
Recently, crystallized gate dielectrics have attracted considerable interest due to their high performance in dielectric properties. We investigated the growth of crystalline ZrO2 films prepared on Si (1 0 0) by the limited reaction sputtering system under different growth temperatures from 400 to 700 °C. The structural characteristics of the samples were studied by x-ray diffraction, reflection high-energy electron diffraction and atomic force microscopy, respectively, which provide a solid identification of the phase transformation from the monoclinic phase to the tetragonal phase. The dielectric properties were studied by C–V and I–V measurements on Au/ZrO2/Si (1 0 0) MIS structures, suggesting that the electrical properties are strongly influenced by the crystalline structures. Furthermore, the tetragonal ZrO2 thin film exhibits a high permittivity up to 32 as well as a negligible flatband voltage shift in C–V curves. The results indicate that the tetragonal ZrO2 dielectric appears to be a very promising high-k candidate for future ULSI devices.
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