Abstract
Fe-doped semi-insulating InP single crystals have been grown by LEC, VCZ and VB techniques. Dislocation density, X-ray topograph and residual strain have been measured to characterize crystallographical properties. Macroscopic and microscopic resistivity and photoluminescence intensity have been measured to estimate electrical uniformity. It was found that Fe-doped InP substrates grown by VB technique had superior properties, such as low dislocation density, no lineages and slip-lines, uniform distribution of residual strain, uniform macroscopic and microscopic distributions of resistivity and photoluminescence intensity. It is concluded that VB is the most suitable technique for the growth of high quality Fe-doped InP single crystals.
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