Abstract
ZnSe-ZnTe strained-layer superlattices (SLSs) were grown on InP, GaAs and InAs substrates by molecular beam epitaxy (MBE). The samples were characterized by transmission electron microscopy (TEM) observation, and photoluminescence (PL) measurement techniques. Uniform and fine superlattice structures were confirmed by TEM observation. Moreover, a distinguishable change in the direction of (111) lattice-fringes from ZnSe layer to ZnTe layer was clearly observed in lattice image observation. The PL peak energy depended on the thickness of the alternating layers and the luminescence was related to the size quantization of the SLS structure. The luminescence peak was also affected by the substrate materials.
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