Abstract
Bulklike ZnSe crystal with crystallographic quality the same as commercial GaAs can be grown at a growth temperature of 950 °C by the solution growth method. The growth rate of the crystal depends on the temperature gradient in the solvent, the length of the heat sink and the mol % of Se in the solvent. The full width at half maximum (FWHM) of x-ray rocking curve of the ZnSe crystal grown by this method is nearly the same as that of GaAs. The crystal grown from a Te/Se solvent of Te≤70 mol % can be regarded as essentially ZnSe from the cathodoluminescence measurement.
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