Abstract
AlN was directly grown on a sapphire substrate by the solution growth method with the Cu–Si–Al–Ti solvent under a nitrogen gas flow. X-ray diffraction measurements revealed that the grown AlN was single crystal. The AlN layer was epitaxially formed on the sapphire substrate with the orientation relationships: (0001)AlN ∥(0001)sapphire and [1̄100]AlN ∥[112̄0]sapphire. The full widths at half maximum (FWHMs) of X-ray rocking curves for tilt and twist components were 414 and 2031 arcsec, respectively.
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