Abstract
ZnMgSe alloys and ZnSe/ZnMgSe multi-quantum well (MQW) structures were grown on GaAs (001) substrates by solid-source molecular beam epitaxy (MBE). It was found that the content of Mg in ZnMgSe alloys can be well controlled by adjusting the beam fluxes of element sources. X-ray reflection spectra from MQWs revealed strong satellite peaks, indicating good structural quality. Due to the quantum confinement effect, the photoluminescence (PL) peaks from the MQWs were shifted with variation in well width. Small Stokes shifts were identified between the transition energies observed by PL and reflectance. The interaction between excitons and LO phonons in ZnSe/ZnMgSe MQWs was greatly reduced compared with that in ZnSe bulk.
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