Growth and characterization of wide bandgap Zn 1− xHg xSe

Abstract

Epitaxial layers of wide-bandgap Zn 1− x Hg x Se ( x = 0–0.14) alloys on GaAs substrates have been successfully grown by gas-source molecular beam epitaxy using elemental Zn and Hg, and H 2Se gas. From the photoluminescence measurements at room temperature and 35 K, we find that luminescence spectra of the Zn 1− x Hg x Se layers are dominated by broad near-band-edge emission bands, whose emission peak shifts rapidly toward lower energies with increasing Hg content. The spectral width of emission bands is discussed in terms of microscopic compositional fluctuation in the alloy layers.