Abstract
ZnSe/GaAs/ZnSe single quantum wells (QW's) with a well width as thin as 2 nm and 15-period ZnSe/GaAs (with a barrier width of 97 nm and a well width of 3 nm) multiple quantum wells have been successfully grown by Migration-Enhanced Epitaxy (MEE). The structures have been confirmed by transmission electron microscopy (TEM) and high-resolution scanning electron microscopy (SEM). It has been also revealed that the quantum well structures are formed coherently on the GaAs(001) substrate. Furthermore, emissions due to the quantum size effect in the ZnSe/GaAs system have been achieved in photoluminescence measurements.
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