Abstract

The topological phases such as Dirac/Weyl semimetals are recently observed in Layered transition metal dichalcogenides (TMDs). The family of materials XTe2 (with X = Pd, Pt and Ni) possesses a type-II topological semimetal (TSM) phase. Here, we report the synthesis of the layered XTe2 thin films using the industry-friendly sputtering technique. The structural and morphological qualities of the sputtered-grown XTe2 thin films are analysed using X-ray diffraction and Raman measurements. The crystallites are highly oriented along the c-axis of the sapphire substrate, which suggests that growth is driven by van der Waals epitaxy. The magneto-transport measurements namely temperature-dependent resistivity and magnetoresistance measurement in out-of-plane field configuration are performed on PdTe2 thin films. The semi-metallic trend and superconducting transition are observed in the temperature-dependent resistivity curve. The weak antilocalization behavior observed in the magnetoconductance curves at a low magnetic field signifies the possibility of a non-zero Berry phase, possibly arising from the Dirac fermionic nature of electronic states. The spin dynamics measurements are performed on the PdTe2/Co60Fe20B20 bilayers. The effective spin mixing conductance and spin current density are found to be ∼2×1020m-2and 2.5MAm-2, respectively in PdTe2/Co60Fe20B20 bilayer which are quite larger than those observed in heavy metal-ferromagnets bilayers, and comparable to MBE-grown topological insulator-ferromagnets heterostructures. This work paves the way to synthesize Te-based layered TMDs using the industrially viable sputtering technique, and demonstrates the prospects for exploring the topological superconductive phase in PdTe2 films and large spin-charge conversion efficiency in PdTe2/Co60Fe20B20 heterostructures.

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