Abstract
Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence.
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