Abstract
FeSe2 thin films were prepared at low temperature by thermal annealing at 350°C during 6h of sequentially evaporated iron and selenium films under selenium atmosphere. The structural, optical and electrical characteristics were investigated. The roughness of films (~76nm) was confirmed by AFM images. Moreover, optical band gap of FeSe2, which was evaluated as nearly 1.11eV and confirmed by the electrical study which yielded a value in the order of 1.08eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of theses thin films were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (180–300°C). Besides, complex impedance and AC conductivity have been investigated on the basis of frequency and temperature dependence.
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