Growth and characterization of silicon oxide films formed in the presence of Si, SiC, and Si3N4

Abstract

In order to comparatively study the growth and characterization of silicon oxide films on Si-based substrates, top-cut solar grade silicon (SOG-Si) containing Si3N4 rods and SiC lumps were used as raw materials and respectively heated at 1773K and 1873K under Ar gas. The samples were investigated by Focus Ion Beam/Scanning Electron Microscope (FIB/SEM) and Energy Dispersive Spectroscopy (EDS). Results indicated that silicon oxides with different morphologies successfully grew on the substrates via various mechanisms. Passive oxidation was evident in the formation of a dense SiO2 surface layer on the base material at 1773K, while active oxidation was evident in the formation of SiO2 with particle, rod, and nanowire-like morphologies, which was the re-oxidation product of SiO at 1873K under the active-to-passive transition. Si, SiC, and Si3N4 have the similar oxidation tendency to form silicon oxides under either passive or active regimes.