Abstract
Silicon carbide is a semiconductor that is highly suitable for various high-temperature and high-power electronic technologies due to its large energy bandgap, thermal conductivity, and breakdown voltage, among other outstanding properties. Large-area high-quality single-crystal wafers are the chief requirement to realize the potential of silicon carbide for these applications. Over the past 20 years, considerable advances have been made in silicon carbide single-crystal growth technology through understanding of growth mechanisms and defect nucleation. Wafer sizes have been greatly improved from wafer diameters of a few millimeters to 100 mm, with overall dislocation densities steadily reducing over the years. Device-killing micropipe defects have almost been eliminated, and the reduction in defect densities has facilitated enhanced understanding of various defect configurations in bulk and homoepitaxial layers. Silicon carbide electronics is expected to continue to grow and steadily replace silicon, particularly for applications under extreme conditions, as higher-quality, lower-priced large wafers become readily available.
Published Version
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