Growth and characterization of Si-doped β-Ga2O3 films by pulsed laser deposition

Abstract

( 2 ‾ 01) oriented Si-doped β-Ga 2 O 3 films were grown on (0001) sapphire substrates with different SiO 2 content in the targets by pulsed laser deposition (PLD). A carrier density of 8.3 × 10 18 cm −3 and a Hall mobility of 0.07 cm 2 V −1 s −1 have been observed for film grown with 1.5 wt % SiO 2 content in the target. Optical transmission spectra show that all the films have high visible region transmittance. Our work shows that PLD is an effective technique for growing conductive Si-doped β-Ga 2 O 3 films. • Si-doped β-Ga 2 O 3 films were grown on sapphire substrates. • The optical and electrical performances of Si-doped β-Ga 2 O 3 films are investigated. • Si-doped β-Ga 2 O 3 film shows a carrier density of 10 18 cm −3 and a Hall mobility of 0.07 cm 2 V −1 s −1 . • Pulsed laser deposition is an effective technique for growing Si-doped β-Ga 2 O 3 films.