Abstract
Thin film of chromium oxide (Cr2O3) having thickness ∼400 nm, was deposited on sapphire substrate by using pulsed laser deposition (PLD) technique. Structural, morphological and optical properties of prepared thin film were investigated using x-ray diffraction (XRD), atomic force microscopy (AFM) and UV–vis spectrophotometry. XRD result confirmed the epitaxial growth of Cr2O3 thin film with preferred orientation along (006) plane and crystallizes in rhombohedral structure as well. AFM analysis showed a very smooth film with root mean square roughness of 0.1 nm. Electrical resistivity measurements were carried out using two-probe method and found resistivity of 11.52 kΩ-cm. The average transmittance recorded from optical transmission spectra is 70% within the wavelength range of 200–800 nm. The dispersion of refractive index was investigated by the Wemple-Di Domenico single oscillator model. The oscillator parameters i.e. single-oscillator energy Eo, the dispersion energy Ed, zero-frequency dielectric constant (ε), and optical conductivity have also been determined. Extinction coefficient, dielectric constant, Urbach and band gap energy were also calculated. This work can further lead to the development of highly effective p-type transparent conducting oxide material for optoelectronic applications.
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