Abstract
Experimental investigations of the development of a reliable and reproducible growth method of Si x Ge 1− x O 2 solid solutions single crystals with quartz structure (α-Si x Ge 1− x O 2) have been performed under hydrothermal conditions. Effects resulting from solution compositions, T– P parameters and growth rates of different faces in morphology and internal structure of crystals as well as capturing and distribution of Si and Ge were also studied. The main crystallochemical characteristics and properties of the crystals have been fixed. α-Si x Ge 1− x O 2 crystals were studied by X-ray, refracting indexes determination methods, DTG-DTA, IR and Raman spectroscopy and they showed the high probability of the isomorphic substitutions of Si–Ge.
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