Abstract
The ilmenite–hematite (1 − x) FeTiO3 · xFe2O3 solid solution system is considered to be a novel material for spin-electronics, microelectronics, high-temperature electronics, and radhard electronics. This paper focuses on thin films of composition x = 0.33 grown on (100) MgO single-crystal substrates using pulsed-laser deposition (PLD) under different argon–oxygen mixtures. The surface of the MgO was found to possess MgO2 crystals, yielding an orientation relationship, [001] MgO ∥ [011] MgO2 and (\( \overline{1} \)00)MgO ∥ (\( \overline{1} \)10) MgO2. The structural characterizations show that the films are crystalline and homogeneous without any secondary phase. The films show a weak and inclined (11\( \overline{2} \)0) growth epitaxy. A bandgap of 3.4–3.7 eV was obtained for these films from optical measurements carried out in the UV–visible region. Electrical measurements confirmed the semiconducting behavior. However, the resistivity was found to increase substantially on the slightest addition of oxygen into the chamber.
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