Abstract
γ-LiAlO2 (100) and sapphire (101̅0) substrates have been employed to grow nonpolar (101̅0) Zn1−xMgxO films using metalorganic chemical vapor deposition. Zn1−xMgxO films with various Mg contents (0 ≤ x ≤ 0.113) are obtained by adjusting the partial pressure of the Mg metalorganic precursor in gas phase. Mg atoms incorporate within the films by means of substituting Zn. No segregated phase such as MgO or metal Mg is observed throughout the Zn1−xMgxO films. Structural characterization of the films indicates that γ-LiAlO2 (100) is a superior substrate to sapphire (101̅0) for the growth of the nonpolar (101̅0) Zn1−xMgxO films. The epitaxial (101̅0) Zn1−xMgxO films are successfully grown on the γ-LiAlO2 substrates with the epitaxial relationship of [101̅0]ZMO ∥ [100]LAO and [12̅10]ZMO ∥ [001]LAO. On the other hand, the Zn1−xMgxO films with both (101̅0) and (101̅3) orientations are obtained on sapphire substrates although Zn1−xMgxO (101̅0) becomes dominant with increasing Mg content. In addition, room-temperature cathodoluminescence spectra of the epitaxial (101̅0) Zn1−xMgxO films show an obvious blue shift of the near-band-edge emission with increasing Mg content, demonstrating bandgap engineering in the epitaxial nonpolar (101̅0) Zn1−xMgxO films on the γ-LiAlO2 substrates.
Published Version
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