Abstract
Aluminum and gallium dual doped ZnO (AGZO) thin film seed layers are deposited by doping equal concentration of Al and Ga ranging from 0.5–1.0 at% with a step of 0.1 at%. Structural analysis reveals hexagonal wurtzite structure of the AGZO films with a preferential orientation along (002) plane. Morphological analysis shows uniform distribution of crystallites. An average of 80% optical transmittance is observed for AGZO seed layers. The optimum doping concentration is found to be 0.8:0.8 at% of Al:Ga, which exhibits higher electron carrier concentration of 5.83 × 1020 cm−3 and lowest resistivity value of 1.72 × 10−2 Ω cm. The as-deposited conducting AGZO seed layers are eventually treated with an aqueous chemical growth (ACG) process with varying time duration, such as 5, 10 and 15 h in order to obtain one dimensional nanostructures. Morphological analysis shows that the as-grown nanowires are vertically aligned with higher growth density. Enhanced near white light emission has been observed for the as-grown AGZO nanowires with an increase in ACG process duration.
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