Abstract
We report the fabrication of one dimensional conducting Al doped ZnO nanowires by spray pyrolysis and subsequent aqueous chemical growth (ACG) process. Al doped ZnO (AZO) thin film seed layers have been prepared with the Al concentration varying from 1 to 5at% by spray pyrolysis technique. The structural analysis shows that the as grown films have hexagonal wurtzite crystal structure with a preferential orientation of (002). The AZO seed layers have an average optical transmittance of 80%. It is observed that 3at% is the optimum value of Al doping concentration in ZnO, showing lowest electrical resistivity of 3.51×10−2Ωcm with a carrier concentration of 1.52×1019cm−3 and exhibiting n-type behavior. This optimum AZO (3at%) films are used as a seed layers for the growth of vertically aligned one dimensional highly conducting ZnO nanowires by a modified aqueous chemical growth (ACG) process. The optical transmittance is found to decrease to the order 50% after the AZO nanowires grown upon AZO (3at%) films. As grown ZnO nanowires exhibit an increased carrier concentration of 2.87×1020cm−3 and a lower resistivity of 3.00×10−2Ωcm in comparison to AZO 3at% seed layers. Photoluminescence studies reveal that AZO seed layers and nanowires exhibit strong UV emission at 378nm. Moreover, AZO nanowires show enhanced luminescent properties in the visible region ranging from 400 to 700nm.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
