Growth and characterization of MBE-grown thin films of InSb on Si

Abstract

Thin (< 1000 Å) InSb single crystalline films with a 〈111〉 orientation have been successfully grown by molecular beam epitaxy (MBE) on Si wafers. A sandwich-type buffer structure, BaF 2/InSb/BaF 2, was used to make this high quality material for semiconductor-on-insulator (SOI) high-speed devices. Both the interdiffusion between adjacent layers and the atomic composition in each layer were examined by Auger electron spectroscopy. The InSb film on the sandwich-type buffer was characterized by X-ray and Hall mobility measurements. The X-ray diffraction patterns indicated the crystallinity and the strain of different structures. The mobility temperature dependences were related not only to impurity and lattice scattering but also to dislocation scattering.