Growth Kinetics and Characterization of Thin Films by Molecular Beam Epitaxy (MBE)

Abstract

There are several methods of epitaxial growth in thin films which have been used mainly for producing electron devices : vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), and solid phase epitaxy (SPE). Molecular beam epitaxy (MBE) is a rather new technique which has been developed as one of the VPE methods.MBE is currently being used to produce thin film devices such as heterojunction lasers, superlattices devices for negative resistance, tunnel diodes, and filed effect transistors. Moreover, MBE has been shown to be a powerful means to study fundamental processes in crystal growth on very clean surfaces in ultra-high vacua (UHV).The fundamental aspects of MBE are reviewed with emphasis on growth kinetics and surface interaction of impinged particles, such as adsorption-desorption, life time of impinged particles, surface migration, and reaction between molecules on surfaces. The characterization and assessment of thin films synthesized by MBE are also discussed.