Abstract

PbSnYbTe is a new and potentially useful material for fabricating double hetero junction PbSnTe diode lasers by molecular b it can be doped heavily p-type at low temperatures for y ∼ 0.10. The lattice constant of (Pb0.85 Sn0.15)1−x Ybx Te is independent of x up to x ∼ 0.10. these characteristics make (Pb1−y Sny )1−x Ybx Te well-suited for the fabrication of lattice-matched double heterojunction lasers with y∼ 0.10.

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