Growth and characterization of large diameter undoped semi-insulating GaAs for direct ion implanted FET technology : R. N. Thomas, H. M. Hobgood, G. W. Eldridge, D. L. Barrett and T. T. Braggins. Solid-St. Electron.24, 387 (1981)

Abstract

An investigation of fast radiation annealing (FRA) of 75As+ -implanted silicon is presented which explores the influence of the following factors on the properties of the implanted layers compared with those of the same material subjected to an isochronal anneal under isothermal furnace annealing (IFA) conditions: the FRA power density (effectively the average temperature of the wafer); the orientation of the implanted layer with respect to the FRA source (face up to the source or face down); the implant dose and energy; the time schedule for the anneal; the distance of the wafer from the source and from a water-cooled platen. All experiments are conducted in a normal laboratory environment without the benefit of clean air. The principle variables studied are the spreading resistance profile and the sheet resistance. Significant differences are observed between IFA and FRA material. The most dramatic is that diffusion in the face-up FRA material is significantly less than that in the face-down FRA material. No explanation has been obtained to date for this difference. Devices made from these layers were tested. Excellent device results have been obtained on both types of annealed material.