Growth and characterization of IR nonlinear optical PbIn6Te10 crystal

Abstract

The crack-free PbIn6Te10 single crystal with ϕ28 mm × 90 mm was grown by the modified Vertical Bridgman method. Experimental results show that the main body of the boule is a PbIn6Te10 single crystal, while the tail has a certain amount of PbTe and Te. The measurements of UV and IR transmission demonstrate that the transmittance of PbIn6Te10 in 3.5–5.0 µm and 8–12 µm is more than 57 % and the corresponding absorption coefficient is in the range of 0.1–0.3 cm−1. The electrical properties of PbIn6Te10 crystal were studied within 50–300 K by temperature-dependent Hall-effect measurement. It is found that the as-grown crystal is an N-type semiconductor, and the carrier concentration varies nearly exponentially duo to the donor impurity ionization in the measured temperature range. Furthermore, the donor impurity ionization energy ∇ED was evaluated to be 0.04779 eV, and the fitted carrier mobility μH ∝ T−3/2 reveals the primary scattering mechanism within 170–300 K is the lattice vibration scattering.