Abstract
AbstractSuperconductivity and transport characteristics of high‐quality wurtzite‐structured In‐ and N‐polarity InN thin film on sapphire substrate by metal‐organic vapor phase epitaxy (MOVPE) were presented in this study. Single‐crystalline InN films with various n‐typed carrier concentrations (n = 1 ∼ 6 × 1019cm–3) resulting from nitrogen vacancy (VN) were obtained by changing buffer layers. Superconductivity phase transition at Tc,onset around 3.5 K are observed in both In‐ and N‐polarity InN. This strongly suggest that the superconduc‐ tivity originate in the In‐VN(and/or VN+)‐In chain in the a‐b plane of InN thin film. Our experimental results show that the nitrogen vacancy in a‐b plane of InN thin film must play important roles for the quasi‐2D superconducting network in InN system. Temperature ‐ dependent resistance broadening of InN at T < Tc,onset(K) under zero magnetic fields was observed and can be expressed by Kosterlitz‐Thouless transition. Details were discussed in this paper. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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