Abstract
In this paper, we report the crystal growth of indium-doped zinc phosphide bulk crystals to obtain n-type conduction. The crystal growth experiments were carried out by unidirectional solidification from In–Zn–P ternary solution, and n-type Zn3P2 bulk crystals were successfully obtained. It was also revealed that the electrical properties of indium-doped Zn3P2 crystals could be controlled by heat treatment under controlled partial pressure of phosphorus or zinc. The relationship between the electron concentration and the partial pressure of zinc or phosphorus even in indium-doped Zn3P2 can be understood on the basis of defect equilibria, as in the case of undoped Zn3P2. However, the controllable range of the electron concentration was 1010–1013 cm−3, which was too low in terms of the concentration of doped indium. This is due to the low formation energy of the intrinsic acceptor, interstitial phosphorus, and carrier compensation should be discussed. According to recent reports on ab initio calculation, a weakly n-type Zn3P2 is expected to be formed under extremely Zn-rich growth conditions. The results obtained in this study coincide with the prediction based on calculations, and provide useful knowledge for the formation of the p–n junction of Zn3P2.
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