Abstract
An indium-doped detector grade Cd0.9Zn0.1Te crystal was grown by the THM technique from Te-rich solution. The as-grown crystal showed the dark resistivity of (1–3)×1010Ωcm. Through IR transmission microscopy Te inclusion with regular triangular or circular shapes could be observed, and the size of Te inclusion was around 7μm and the concentration was ∼105cm−3. The impurity concentrations were greatly reduced for the THM grown CZT, as compared to the Bridgman method grown CZT. A resolution of 8.5% was achieved under the 662keV 137Cs gamma ray radiation at room temperature for the as-grown CZT samples.
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