Distribution of Te Inclusions in CdMnTe Crystal Grown by Traveling Heater Method

Abstract

This study investigated Te inclusions in CdMnTe crystals grown by the traveling heater method (THM). Three CdMnTe ingots were grown under different growth temperatures of 850°C, 900°C, and 950°C by the THM method. In the CdMnTe ingots, the concentration of Te inclusion was lower in the middle-to-deposit part, and the size of Te inclusions kept growing till the last-to-deposit part. The concentrations of Te inclusions along the CdMnTe ingots were in the range of 104–106 cm−3, with the size in the range of 3–16 μm. CdMnTe crystals grown under 900°C had the lowest density and size of Te inclusion, due to the smooth and near-planar growth interface as revealed by infrared (IR) transmission microscopy. The relationship between the origin of Te inclusions and growth interface was analyzed during the THM growth of CdMnTe. IR transmission spectrometry was used to characterize Te inclusions in CdMnTe crystals. Current–voltage (I–V) and energy response measurements were carried out to reveal the resistivity (ρ) and energy resolution of CdMnTe detectors. The effects of Te inclusions on the optical and electrical properties of CdMnTe crystals for nuclear detector applications are discussed.