Abstract
InAs/InP0.69Sb0.31 superlattice (SL) has been successfully grown on InAs substrate using metalorganic chemical vapor deposition for short-wavelength infrared detection. The SL epilayer has a fairly good structural quality and surface morphology evidenced by X-ray diffraction and atomic force microscopy, respectively. A strong 2.83 μm peak was observed in photoluminescence (PL) measurement at 77 K, deviated from the theoretical estimation. Scanning transmission electron microscope (STEM) reveals well-arranged sublayers and asymmetric interfaces. The incorporation of arsenic into the InPSb layers due to As-carryover effect and As/Sb exchange was proposed to explain the reduced effective bandgap and SL interfacial asymmetry.
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