Abstract
In this letter we report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed photoresponse up to 12 μm and peak responsivity of 5.5 V/W with Johnson noise limited detectivity of 1.33×109 cm Hz1/2/W at 10.3 μm at 78 K.
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