Abstract
High-conductivity ZnO films have been deposited on sapphire substrates using organometallic chemical vapor deposition at atmospheric pressure. Unintentionally doped films had net donor concentrations of 1017–1020 cm-3 and resistivities of 10-3-1 Ω cm. Resistivity was found to be dependent upon oxidant partial pressure present during deposition. Photoluminescence spectroscopy at 16 K indicated the presence of strong near band edge emission at 3.36 eV in addition to deep level emission peaks at 1.8, 2.1 and 2.4 eV.
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