Abstract
Atomic layer growth of ZnO thin films was achieved using diethylzinc (DEZ) and H2O as reactant gases. Self-limiting growth occurred at substrate temperatures ranging from 206 to 268 °C. Self-limiting growth was also achieved for a certain region of the DEZ flow rate. It was found that the crystal growth orientation of the films was strongly dependent on the substrate temperature and the DEZ flow rate. The low temperature photoluminescence spectra exhibit dominant band edge emission at around 3.36 eV.
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