Abstract
The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is possible to grow pure Si or SiGe NW thanks to these techniques. Nevertheless, Au could deteriorate the electric properties of SC and the use of other metal catalysts will be mandatory if NW are to be designed for innovating electronic. First, this article's focus will be on SiGe NW's growth using Au catalyst. The authors managed to grow SiGe NW between 350 and 400°C. Ge concentration (x) in Si1-xGex NW has been successfully varied by modifying the gas flow ratio: R = GeH4/(SiH4 + GeH4). Characterization (by Raman spectroscopy and XRD) revealed concentrations varying from 0.2 to 0.46 on NW grown at 375°C, with R varying from 0.05 to 0.15. Second, the results of Si NW growths by CVD using alternatives catalysts such as platinum-, palladium- and nickel-silicides are presented. This study, carried out on a LPCVD furnace, aimed at defining Si NW growth conditions when using such catalysts. Since the growth temperatures investigated are lower than the eutectic temperatures of these Si-metal alloys, VSS growth is expected and observed. Different temperatures and HCl flow rates have been tested with the aim of minimizing 2D growth which induces an important tapering of the NW. Finally, mechanical characterization of single NW has been carried out using an AFM method developed at the LTM. It consists in measuring the deflection of an AFM tip while performing approach-retract curves at various positions along the length of a cantilevered NW. This approach allows the measurement of as-grown single NW's Young modulus and spring constant, and alleviates uncertainties inherent in single point measurement.
Highlights
Owing to their novel and promising potential applications for upcoming technologies, semiconductor (SC) nanowires (NW) have been the object of an increasing interest during the past few years
Numerous publications show the diversity of applications these nanostructures are destined to: electronic devices [1,2,3], optoelectronics and photonics [4,5,6], sensors [7,8], solar cells [9,10,11], etc
It is possible to synthesize SiGe NW to combine the properties of this alloy to the numerous promising 1D applications for 3D electronics
Summary
Owing to their novel and promising potential applications for upcoming technologies, semiconductor (SC) nanowires (NW) have been the object of an increasing interest during the past few years. Bottom-up approach, which will be the focus of this study, allows the growth of a crystalline nanostructure on any substrate at low temperatures. The temperatures needed are much higher with those metals than for gold because of the physical properties of the alloy catalyst particles.
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