Abstract
GaAs-low compensated layers were grown by using an atmospheric MOCVD system. Solid arsenic and triethylgallium (TEG) were used as precursors. The layers exhibit an electron mobility greater than 30,000 cm2/V-sec at 77K for best growing conditions. This is the highest value reported until now for MOCVD GaAs grown by using non-arsine based alternative arsenic sources. The resulting layers were n-type with a minimum electron concentration of 1015 cm-3. The DLTS studies shown the EL2 electron level as the dominant trap with a concentration of 1013 cm-3.
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