Abstract
Single crystalline Er-doped GaN was grown by ammonia source molecular beam epitaxy, and luminescence properties, structural properties were studied. It was found that the intensity of the luminescence in green spectral region from Er-doped GaN is two orders of magnitude stronger than that of Tb-doped GaN, which shows luminescence in green spectral region as well, and that the coordination symmetry of N around Er in GaN was lower than that of Tb. The lower coordination symmetry may be one of the reasons for the improved luminescence of Er-doped GaN.
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