Abstract
Thin single crystalline layers of Ge with atomically sharp boundaries have been formed epitaxially on (100) Si substrates. This was done by /sup 74/Ge ion implantation into Si followed by steam oxidation. Using both Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM), we have found that a Ge layer forms as a result of Ge segregated at the moving SiO/sub 2/ interface during steam oxidation. For a SiO/sub 2/ layer that has swept through the implanted region, essentially all of the Ge is snow-ploughed and no Ge is lost to the oxide layer. The Ge layers and its two bounding interfaces, i.e., Ge/SiO/sub 2/ and Ge/Si, have been characterized as a function of the implantation dose and energy. The thickness of the Ge layer formed is dependent on the implantation dose. Thicknesses from a fraction of a monolayer to greater than 50 monolayers of Ge can be formed on Si by this mechanism. Initially the Ge layer forms a coherent interface with the underlying Si with no misfit dislocations, and misfit dislocations only appear as the thickness of the film is increased.
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