Abstract
AbstractHigh output power (above 3 mW/facet) AlGaAs/GaAs Transverse‐Junction Stripe light emitting diodes have been grown on Semi‐Insulating (100) GaAs substrates by Liquid Phase Epitaxy. these light emitting diodes utilize a “Direct‐connecting” transverse‐junction stripe structure, which can confine the transverse‐current and reduce the series resistance. By thinning the thickness of the “effective active‐layer” of this structure, a room‐temperature pulsed lasing operation is also achieved with a threshold current as low as 35 mA and a peak wavelength around 904 nm. This “Direct‐connecting” transverse‐Junction Stripe light emitting device with a Metal‐Semiconductor Field Effect Transistor on an electrical isolated semi‐insulating substrate in the future.
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