Abstract
We have grown high-quality cubic GaN epilayers on GaAs and 3C-SiC substrates by molecular beam epitaxy technique using dimethylhydrazine or ammonia/nitrogen plasma as a nitrogen source. An X-ray diffraction peak width of 16 min and a low-temperature photoluminescence peak width of 19 meV were achieved. Various surface reconstruction transitions have been observed for cubic GaN(0 0 1) surfaces, recently. These results, along with previously published studies on cubic nitrides, are summarized, and the current status of the growth and characterization of cubic nitrides including AlN and InN is discussed.
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