Abstract
We have succeeded in growing cubic AlGaN epilayers in the whole Al compositional region for the first time, on 3C–SiC (0 0 1) substrates by radio frequency N 2 plasma molecular beam epitaxy. The use of AlN buffer layers was found effective for the growth on 3C–SiC substrates. The lattice constant of obtained cubic AlGaN epilayers was confirmed to obey the Vegard's law in the whole compositional region, and several Raman modes were observed. The highest emission energies in the cathodoluminescence spectra of the cubic AlGaN epilayers increased linearly as Al composition increased, and no significant decrease in the emission intensity was observed. These results suggest the direct transition band structure of the cubic AlGaN, contrary to the theoretical prediction.
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