Abstract
Monocrystalline CdS films are successfully grown on (100)GaAs at the low temperature of 340°C by atomic layer epitaxy (ALE) using a molecular beam epitaxy (MBE) system. The growth orientation of the epilayer is 〈100〉 of a zincblende structure with no twinning. The film thickness is in good agreement with the predesigned atomic layer numbers. The variation of the film thickness is uniform in the whole area of the epilayer and the surface morphology is flat and smooth. The photoluminescence spectra show dominant near-band-edge emission, suggesting a high crystallographic quality. It is indicated that the ALECdS epilayer is advantageous, especially for the ultrathin multilayer structure preparation.
Published Version
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