Abstract
We have investigated Bi-doped PbS thin films (Bi⩽ 5.23mol%) prepared by hot-wall epitaxy. Infrared absorption by free carrier was observed on the transmission measurement by FT-IR. The relation between the absorption coefficient α and the carrier concentration n is expressed as follow: α = 4.53 × 10−17 n1.03 at 10 μm. The high carrier concentration is obtained above 1019 cm−3 with n-type conductivity due to the doping of Bi in the films. Optical absorption edge shifts toward the larger frequency in proportion to the carrier concentration. The measurements of full-width at half-maximum (FWHM) of the X-ray diffraction patterns suggest that it is important to suppress the amount of Bi concentration in PbS thin films below about 1.5 mol% for obtaining excellent crystallinity.
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