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Abstract
Abstract The growth of C60 thin films on mica by Hot Wall Epitaxy was studied using high resolution X - ray diffraction. The influence of the Hot Wall source-, wall- and substrate temperature on the crystalline quality of the C60 films was investigated by determining the full width at half maximum (FWHM) Δω of the C60 - (111) reflex in ω - direction (i. e. rocking curve). With the optimal parameters of growth (substrate temperature = 140 C, growth rate = 0.5 Å/s) it is possible to grow 150 nm thick C60 films with an ω - scan FWHM Δω of about 200 arcsec, the best value reported so far, indicating the growth of a perfect monocrystalline C60 layer. Rocking curves of thicker films exhibit a complex shape, which is interpreted as a result of a change in the growth mode of C60 films exceeding a critical thickness. In addition surface cracks appearing on the C60 film surface are investigated using digital image processing. Atomic force microscopy- and photoluminescence measurements performed on the thin films complete this study.
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